Electronic Properties of Transferable Atomically Thin MoSe 2 /h-BN Heterostructures Grown on Rh(111)

Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, an encapsulant, or a tunnel barrier. However, reliable synthesis of large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer (ML) MoSe on h-BN/Rh(111) by molecular beam epitaxy, where the MoSe /h-BN layer system can be transferred from the growth substrate onto SiO . The valence band structure of ML MoSe /h-BN/Rh(111) revealed by photoemission electron momentum microscopy ( kPEEM) shows that the valence band maximum located at the K point is 1.33 eV below the Fermi level ( E ), whereas the energy difference between K and Γ points is determined to be 0.23 eV, demonstrating that the electronic properties, such as the direct band gap and the effective mass of ML MoSe , are well preserved in MoSe /h-BN heterostructures.