Highly doped silicon nanowires based electrodes for micro-electrochemical capacitor applications

Highly doped (both n and p-type dopings) silicon nanowires (SiNWs) have been deposited via Chemical Vapor Deposition and investigated as electrode materials for micro-capacitor in a standard organic based electrolyte. Silicon nanostructuration enables to increase areal capacitance. Double layer capacitance values up to 46μF·cm−2 have been measured. Micro capacitors based on two SiNWs electrodes exhibit an excellent cycling ability and power density as high as 1.6mW·cm−2. ► Highly doped silicon nanowires were investigated for micro-electrochemical capacitor. ► Double layer capacitance values of 34-46µF/cm2. ► Nanostructuration of Silicon NanoWires (SiNWs) has been emphasized. ► n/p-doped SiNWs exhibits excellent cyclability with power density of 1.6mW/cm2.