Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface
Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic...
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| Veröffentlicht in: | Surface science 2016-09, Vol.651, p.147-153 |
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| creator | Richter, M.C. Mariot, J.-M. Gafoor, M.A. Nicolaï, L. Heckmann, O. Djukic, U. Ndiaye, W. Vobornik, I. Fujii, J. Barrett, N. Feyer, V. Schneider, C.M. Hricovini, K. |
| description | Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic and chemical evolutions of the Bi films that are found to be InAs side dependent. On the A side, a morphology of circular patterns controlled by Bi atoms mobility is observed. The patterns are formed on the pristine In-terminated InAs(111) surface covered by a weakly bonded Bi bilayer. On the B side, no particular morphology is observed due to a stronger chemical interaction between Bi and As atoms as evidenced by the spatially-resolved core-level photoelectron spectra.
[Display omitted]
•PEEM snapshots in real- and k-space of the Bi/InAs(111) interface are recorded.•Bi growth on InAs(111) depends on whether the surface is In- or As-terminated.•A morphology of circular patterns appears upon annealing Bi/InAs(In-terminated).•The pattern changes upon annealing are controlled by the mobility of Bi atoms.•Bi clusters are formed upon annealing Bi/InAs(As-terminated). |
| doi_str_mv | 10.1016/j.susc.2016.03.032 |
| format | Article |
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[Display omitted]
•PEEM snapshots in real- and k-space of the Bi/InAs(111) interface are recorded.•Bi growth on InAs(111) depends on whether the surface is In- or As-terminated.•A morphology of circular patterns appears upon annealing Bi/InAs(In-terminated).•The pattern changes upon annealing are controlled by the mobility of Bi atoms.•Bi clusters are formed upon annealing Bi/InAs(As-terminated).</description><identifier>ISSN: 0039-6028</identifier><identifier>EISSN: 1879-2758</identifier><identifier>DOI: 10.1016/j.susc.2016.03.032</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Annealing ; ARPES ; Bismuth ; Bonding strength ; Chemical reactivity ; Circular pattern morphology ; Circularity ; Indium arsenide ; Indium arsenides ; Melting ; Morphology ; PEEM ; Photoemission ; Physics ; Spectra</subject><ispartof>Surface science, 2016-09, Vol.651, p.147-153</ispartof><rights>2016 Elsevier B.V.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c411t-177715a612107b7bf2851aec730bfcf9bd5b38e97359fb9b629a397685824fe3</citedby><cites>FETCH-LOGICAL-c411t-177715a612107b7bf2851aec730bfcf9bd5b38e97359fb9b629a397685824fe3</cites><orcidid>0000-0002-8228-0805</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.susc.2016.03.032$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,315,782,786,887,3552,27931,27932,46002</link.rule.ids><backlink>$$Uhttps://cea.hal.science/cea-01481529$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Richter, M.C.</creatorcontrib><creatorcontrib>Mariot, J.-M.</creatorcontrib><creatorcontrib>Gafoor, M.A.</creatorcontrib><creatorcontrib>Nicolaï, L.</creatorcontrib><creatorcontrib>Heckmann, O.</creatorcontrib><creatorcontrib>Djukic, U.</creatorcontrib><creatorcontrib>Ndiaye, W.</creatorcontrib><creatorcontrib>Vobornik, I.</creatorcontrib><creatorcontrib>Fujii, J.</creatorcontrib><creatorcontrib>Barrett, N.</creatorcontrib><creatorcontrib>Feyer, V.</creatorcontrib><creatorcontrib>Schneider, C.M.</creatorcontrib><creatorcontrib>Hricovini, K.</creatorcontrib><title>Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface</title><title>Surface science</title><description>Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic and chemical evolutions of the Bi films that are found to be InAs side dependent. On the A side, a morphology of circular patterns controlled by Bi atoms mobility is observed. The patterns are formed on the pristine In-terminated InAs(111) surface covered by a weakly bonded Bi bilayer. On the B side, no particular morphology is observed due to a stronger chemical interaction between Bi and As atoms as evidenced by the spatially-resolved core-level photoelectron spectra.
[Display omitted]
•PEEM snapshots in real- and k-space of the Bi/InAs(111) interface are recorded.•Bi growth on InAs(111) depends on whether the surface is In- or As-terminated.•A morphology of circular patterns appears upon annealing Bi/InAs(In-terminated).•The pattern changes upon annealing are controlled by the mobility of Bi atoms.•Bi clusters are formed upon annealing Bi/InAs(As-terminated).</description><subject>Annealing</subject><subject>ARPES</subject><subject>Bismuth</subject><subject>Bonding strength</subject><subject>Chemical reactivity</subject><subject>Circular pattern morphology</subject><subject>Circularity</subject><subject>Indium arsenide</subject><subject>Indium arsenides</subject><subject>Melting</subject><subject>Morphology</subject><subject>PEEM</subject><subject>Photoemission</subject><subject>Physics</subject><subject>Spectra</subject><issn>0039-6028</issn><issn>1879-2758</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kE9rAjEQxUNpodb2C_S0Rz2sZpLNJoFetLQqCL14D9nsLEb2j01WwW_fFUuPHR7MHH7vwTxCXoHOgEI-P8ziKboZG-4Z5YPYHRmBkjplUqh7MqKU6zSnTD2SpxgPdJhMixFZLX1i-66JSdMVvvb9JS2DP2ObOB_cqbYhKbvG-jYOWNLvMVn6-aZdxAkATBPf9hgq6_CZPFS2jvjyu8dk9_mxe1-n26_V5n2xTV0G0KcgpQRhc2BAZSGLiikBFp3ktKhcpYtSFFyhllzoqtBFzrTlWuZKKJZVyMdkeovd29ocg29suJjOerNebI1DayhkCgTTZxjYyY09hu77hLE3jY8O69q22J2iAcVFnmWcsQFlN9SFLsaA1V82UHMt2BzMtWBzLdhQPuhqeruZcPj37DGY6Dy2Dksf0PWm7Px_9h8IWYFe</recordid><startdate>20160901</startdate><enddate>20160901</enddate><creator>Richter, M.C.</creator><creator>Mariot, J.-M.</creator><creator>Gafoor, M.A.</creator><creator>Nicolaï, L.</creator><creator>Heckmann, O.</creator><creator>Djukic, U.</creator><creator>Ndiaye, W.</creator><creator>Vobornik, I.</creator><creator>Fujii, J.</creator><creator>Barrett, N.</creator><creator>Feyer, V.</creator><creator>Schneider, C.M.</creator><creator>Hricovini, K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-8228-0805</orcidid></search><sort><creationdate>20160901</creationdate><title>Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface</title><author>Richter, M.C. ; Mariot, J.-M. ; Gafoor, M.A. ; Nicolaï, L. ; Heckmann, O. ; Djukic, U. ; Ndiaye, W. ; Vobornik, I. ; Fujii, J. ; Barrett, N. ; Feyer, V. ; Schneider, C.M. ; Hricovini, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c411t-177715a612107b7bf2851aec730bfcf9bd5b38e97359fb9b629a397685824fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Annealing</topic><topic>ARPES</topic><topic>Bismuth</topic><topic>Bonding strength</topic><topic>Chemical reactivity</topic><topic>Circular pattern morphology</topic><topic>Circularity</topic><topic>Indium arsenide</topic><topic>Indium arsenides</topic><topic>Melting</topic><topic>Morphology</topic><topic>PEEM</topic><topic>Photoemission</topic><topic>Physics</topic><topic>Spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Richter, M.C.</creatorcontrib><creatorcontrib>Mariot, J.-M.</creatorcontrib><creatorcontrib>Gafoor, M.A.</creatorcontrib><creatorcontrib>Nicolaï, L.</creatorcontrib><creatorcontrib>Heckmann, O.</creatorcontrib><creatorcontrib>Djukic, U.</creatorcontrib><creatorcontrib>Ndiaye, W.</creatorcontrib><creatorcontrib>Vobornik, I.</creatorcontrib><creatorcontrib>Fujii, J.</creatorcontrib><creatorcontrib>Barrett, N.</creatorcontrib><creatorcontrib>Feyer, V.</creatorcontrib><creatorcontrib>Schneider, C.M.</creatorcontrib><creatorcontrib>Hricovini, K.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Richter, M.C.</au><au>Mariot, J.-M.</au><au>Gafoor, M.A.</au><au>Nicolaï, L.</au><au>Heckmann, O.</au><au>Djukic, U.</au><au>Ndiaye, W.</au><au>Vobornik, I.</au><au>Fujii, J.</au><au>Barrett, N.</au><au>Feyer, V.</au><au>Schneider, C.M.</au><au>Hricovini, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface</atitle><jtitle>Surface science</jtitle><date>2016-09-01</date><risdate>2016</risdate><volume>651</volume><spage>147</spage><epage>153</epage><pages>147-153</pages><issn>0039-6028</issn><eissn>1879-2758</eissn><abstract>Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic and chemical evolutions of the Bi films that are found to be InAs side dependent. On the A side, a morphology of circular patterns controlled by Bi atoms mobility is observed. The patterns are formed on the pristine In-terminated InAs(111) surface covered by a weakly bonded Bi bilayer. On the B side, no particular morphology is observed due to a stronger chemical interaction between Bi and As atoms as evidenced by the spatially-resolved core-level photoelectron spectra.
[Display omitted]
•PEEM snapshots in real- and k-space of the Bi/InAs(111) interface are recorded.•Bi growth on InAs(111) depends on whether the surface is In- or As-terminated.•A morphology of circular patterns appears upon annealing Bi/InAs(In-terminated).•The pattern changes upon annealing are controlled by the mobility of Bi atoms.•Bi clusters are formed upon annealing Bi/InAs(As-terminated).</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.susc.2016.03.032</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-8228-0805</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Annealing ARPES Bismuth Bonding strength Chemical reactivity Circular pattern morphology Circularity Indium arsenide Indium arsenides Melting Morphology PEEM Photoemission Physics Spectra |
| title | Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface |
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