Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface

Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic and chemical evolutions of the Bi films that are found to be InAs side dependent. On the A side, a morphology of circular patterns controlled by Bi atoms mobility is observed. The patterns are formed on the pristine In-terminated InAs(111) surface covered by a weakly bonded Bi bilayer. On the B side, no particular morphology is observed due to a stronger chemical interaction between Bi and As atoms as evidenced by the spatially-resolved core-level photoelectron spectra. [Display omitted] •PEEM snapshots in real- and k-space of the Bi/InAs(111) interface are recorded.•Bi growth on InAs(111) depends on whether the surface is In- or As-terminated.•A morphology of circular patterns appears upon annealing Bi/InAs(In-terminated).•The pattern changes upon annealing are controlled by the mobility of Bi atoms.•Bi clusters are formed upon annealing Bi/InAs(As-terminated).