How ligands affect resistive switching in solution-processed HfO2 nanoparticle assemblies

Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance. Although thin-film oxide materials have been extensively studied, the switching properties of nano particle assemblies remain u...

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Bibliographische Detailangaben

Hauptverfasser:	Wang, Jiaying, Choudhary, Satyan, De Roo, Jonathan, De Keukeleere, Katrien, Van Driessche, Isabel, Crosby, Alfred J, Nonnenmann, Stephen S
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry hafnium oxide ligands MEMORIES nanoparticles NANOSCALE resistive switching RIBBONS RRAM solution-processed
Online-Zugang:	Volltext
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