How ligands affect resistive switching in solution-processed HfO2 nanoparticle assemblies

Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance. Although thin-film oxide materials have been extensively studied, the switching properties of nano particle assemblies remain underexplored due to difficulties in fabricating ordered structures. Here, we employ a simple flow coating method for the facile deposition of highly ordered HfO2 nanoparticle nanoribbon assemblies. The resistive switching character of nanoribbons was determined to correlate directly with the organic capping layer length of their constituting HfO2 nanoparticles, using oleic acid, dodecanoic acid, and undecenoic acid as model nanoparticle ligands. Through a systematic comparison of the forming process, operating set/reset voltages, and resistance states, we demonstrate a tunable resistive switching response by varying the ligand type, thus providing a base correlation for solution processed ReRAM device fabrication.