Low Noise Power Amplifier in 28-nm UTBB FDSOI Technology with Forward Body Bias

Low Noise Power Amplifier in 28-nm UTBB FDSOI Technology with Forward Body Bias

This paper presents a design of mm-wave LNPA which generates a large output power and low noise figure in one stage for a harmonic feedback oscillator block at the candidate of 5G; frequency 26 GHz. The LNPA is designed in the 28 nm UTBB FD-SOI. The benefits of this technology are stated with the ef...

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Veröffentlicht in:International journal of digital information and wireless communications 2018-04, Vol.8 (2), p.129-132
Hauptverfasser: Mohsen, Ali, Harb, Adnan, Deltimple, Nathalie, Serhane, Abraham
Format: Artikel
Sprache:eng
Schlagworte:
Circuit design
Design and construction
Methods
Power amplifiers
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Beschreibung
Zusammenfassung:This paper presents a design of mm-wave LNPA which generates a large output power and low noise figure in one stage for a harmonic feedback oscillator block at the candidate of 5G; frequency 26 GHz. The LNPA is designed in the 28 nm UTBB FD-SOI. The benefits of this technology are stated with the effects of body biasing for the mm-wave LNPA. This amplifier is designed using a common source topology. It achieves 14 dBm Psat and 2.5 dB noise figure "NF".
ISSN:2225-658X
2225-658X
DOI:10.17781/P002419