Photoluminescence Spectra of thin Zno films grown by ALD technology

The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic or...

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Veröffentlicht in:Physics of the solid state 2015-09, Vol.57 (9), p.1865-1869
Hauptverfasser: Akopyan, I. Kh, Davydov, V. Yu, Labzovskaya, M. E., Lisachenko, A. A., Mogunov, Ya. A., Nazarov, D. V., Novikov, B. V., Romanychev, A. I., Serov, A. Yu, Smirnov, A. N., Titov, V. V., Filosofov, N. G.
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container_end_page 1869
container_issue 9
container_start_page 1865
container_title Physics of the solid state
container_volume 57
creator Akopyan, I. Kh
Davydov, V. Yu
Labzovskaya, M. E.
Lisachenko, A. A.
Mogunov, Ya. A.
Nazarov, D. V.
Novikov, B. V.
Romanychev, A. I.
Serov, A. Yu
Smirnov, A. N.
Titov, V. V.
Filosofov, N. G.
description The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.
doi_str_mv 10.1134/S1063783415090036
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subjects Dielectric films
Lasers
Low-Dimensional Systems
Photoluminescence
Physics
Physics and Astronomy
Silicon
Solid State Physics
Thin films
Zinc oxide
title Photoluminescence Spectra of thin Zno films grown by ALD technology
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