Photoluminescence Spectra of thin Zno films grown by ALD technology
The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic or...
Gespeichert in:
Veröffentlicht in: | Physics of the solid state 2015-09, Vol.57 (9), p.1865-1869 |
---|---|
Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 1869 |
---|---|
container_issue | 9 |
container_start_page | 1865 |
container_title | Physics of the solid state |
container_volume | 57 |
creator | Akopyan, I. Kh Davydov, V. Yu Labzovskaya, M. E. Lisachenko, A. A. Mogunov, Ya. A. Nazarov, D. V. Novikov, B. V. Romanychev, A. I. Serov, A. Yu Smirnov, A. N. Titov, V. V. Filosofov, N. G. |
description | The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed. |
doi_str_mv | 10.1134/S1063783415090036 |
format | Article |
fullrecord | <record><control><sourceid>gale_cross</sourceid><recordid>TN_cdi_gale_infotracmisc_A454609205</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A454609205</galeid><sourcerecordid>A454609205</sourcerecordid><originalsourceid>FETCH-LOGICAL-c389t-8e1624515749d5928fe0ed407ff1c7ebd38300d334c7053de7a1c3f6c4bfbeb13</originalsourceid><addsrcrecordid>eNp9kU1LAzEQhoMoWKs_wFvAk4etmU3261jqV6GgWL14CbvZyXbLbiLJFu2_N6VeiiI5ZGCeJ8ybIeQS2ASAi5slsJRnOReQsIIxnh6REYQqSkXKjnd1yqNd_5Sceb9mDACSYkRmzys72G7Ttwa9QqOQLj9QDa6kVtNh1Rr6bizVbdd72jj7aWi1pdPFLR1QrYztbLM9Jye67Dxe_Nxj8nZ_9zp7jBZPD_PZdBEpnhdDlCOksUggyURRJ0Wca2RYC5ZpDSrDquY5Z6zmXKiMJbzGrATFdapEpSusgI_J1f7dpuxQtkbbMKbqW6_kVCQhZxEHb0wmf1Dh1Ni3yhoMWfBQuD4QAjPg19CUG-_lfPlyyMKeVc5671DLD9f2pdtKYHK3CPlrEcGJ944PrGnQybXdOBN-6h_pG82Ph0o</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photoluminescence Spectra of thin Zno films grown by ALD technology</title><source>Springer Nature Link eJournals</source><creator>Akopyan, I. Kh ; Davydov, V. Yu ; Labzovskaya, M. E. ; Lisachenko, A. A. ; Mogunov, Ya. A. ; Nazarov, D. V. ; Novikov, B. V. ; Romanychev, A. I. ; Serov, A. Yu ; Smirnov, A. N. ; Titov, V. V. ; Filosofov, N. G.</creator><creatorcontrib>Akopyan, I. Kh ; Davydov, V. Yu ; Labzovskaya, M. E. ; Lisachenko, A. A. ; Mogunov, Ya. A. ; Nazarov, D. V. ; Novikov, B. V. ; Romanychev, A. I. ; Serov, A. Yu ; Smirnov, A. N. ; Titov, V. V. ; Filosofov, N. G.</creatorcontrib><description>The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783415090036</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Dielectric films ; Lasers ; Low-Dimensional Systems ; Photoluminescence ; Physics ; Physics and Astronomy ; Silicon ; Solid State Physics ; Thin films ; Zinc oxide</subject><ispartof>Physics of the solid state, 2015-09, Vol.57 (9), p.1865-1869</ispartof><rights>Pleiades Publishing, Ltd. 2015</rights><rights>COPYRIGHT 2015 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-8e1624515749d5928fe0ed407ff1c7ebd38300d334c7053de7a1c3f6c4bfbeb13</citedby><cites>FETCH-LOGICAL-c389t-8e1624515749d5928fe0ed407ff1c7ebd38300d334c7053de7a1c3f6c4bfbeb13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063783415090036$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063783415090036$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Akopyan, I. Kh</creatorcontrib><creatorcontrib>Davydov, V. Yu</creatorcontrib><creatorcontrib>Labzovskaya, M. E.</creatorcontrib><creatorcontrib>Lisachenko, A. A.</creatorcontrib><creatorcontrib>Mogunov, Ya. A.</creatorcontrib><creatorcontrib>Nazarov, D. V.</creatorcontrib><creatorcontrib>Novikov, B. V.</creatorcontrib><creatorcontrib>Romanychev, A. I.</creatorcontrib><creatorcontrib>Serov, A. Yu</creatorcontrib><creatorcontrib>Smirnov, A. N.</creatorcontrib><creatorcontrib>Titov, V. V.</creatorcontrib><creatorcontrib>Filosofov, N. G.</creatorcontrib><title>Photoluminescence Spectra of thin Zno films grown by ALD technology</title><title>Physics of the solid state</title><addtitle>Phys. Solid State</addtitle><description>The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.</description><subject>Dielectric films</subject><subject>Lasers</subject><subject>Low-Dimensional Systems</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silicon</subject><subject>Solid State Physics</subject><subject>Thin films</subject><subject>Zinc oxide</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kU1LAzEQhoMoWKs_wFvAk4etmU3261jqV6GgWL14CbvZyXbLbiLJFu2_N6VeiiI5ZGCeJ8ybIeQS2ASAi5slsJRnOReQsIIxnh6REYQqSkXKjnd1yqNd_5Sceb9mDACSYkRmzys72G7Ttwa9QqOQLj9QDa6kVtNh1Rr6bizVbdd72jj7aWi1pdPFLR1QrYztbLM9Jye67Dxe_Nxj8nZ_9zp7jBZPD_PZdBEpnhdDlCOksUggyURRJ0Wca2RYC5ZpDSrDquY5Z6zmXKiMJbzGrATFdapEpSusgI_J1f7dpuxQtkbbMKbqW6_kVCQhZxEHb0wmf1Dh1Ni3yhoMWfBQuD4QAjPg19CUG-_lfPlyyMKeVc5671DLD9f2pdtKYHK3CPlrEcGJ944PrGnQybXdOBN-6h_pG82Ph0o</recordid><startdate>20150901</startdate><enddate>20150901</enddate><creator>Akopyan, I. Kh</creator><creator>Davydov, V. Yu</creator><creator>Labzovskaya, M. E.</creator><creator>Lisachenko, A. A.</creator><creator>Mogunov, Ya. A.</creator><creator>Nazarov, D. V.</creator><creator>Novikov, B. V.</creator><creator>Romanychev, A. I.</creator><creator>Serov, A. Yu</creator><creator>Smirnov, A. N.</creator><creator>Titov, V. V.</creator><creator>Filosofov, N. G.</creator><general>Pleiades Publishing</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope></search><sort><creationdate>20150901</creationdate><title>Photoluminescence Spectra of thin Zno films grown by ALD technology</title><author>Akopyan, I. Kh ; Davydov, V. Yu ; Labzovskaya, M. E. ; Lisachenko, A. A. ; Mogunov, Ya. A. ; Nazarov, D. V. ; Novikov, B. V. ; Romanychev, A. I. ; Serov, A. Yu ; Smirnov, A. N. ; Titov, V. V. ; Filosofov, N. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-8e1624515749d5928fe0ed407ff1c7ebd38300d334c7053de7a1c3f6c4bfbeb13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Dielectric films</topic><topic>Lasers</topic><topic>Low-Dimensional Systems</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Silicon</topic><topic>Solid State Physics</topic><topic>Thin films</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Akopyan, I. Kh</creatorcontrib><creatorcontrib>Davydov, V. Yu</creatorcontrib><creatorcontrib>Labzovskaya, M. E.</creatorcontrib><creatorcontrib>Lisachenko, A. A.</creatorcontrib><creatorcontrib>Mogunov, Ya. A.</creatorcontrib><creatorcontrib>Nazarov, D. V.</creatorcontrib><creatorcontrib>Novikov, B. V.</creatorcontrib><creatorcontrib>Romanychev, A. I.</creatorcontrib><creatorcontrib>Serov, A. Yu</creatorcontrib><creatorcontrib>Smirnov, A. N.</creatorcontrib><creatorcontrib>Titov, V. V.</creatorcontrib><creatorcontrib>Filosofov, N. G.</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Akopyan, I. Kh</au><au>Davydov, V. Yu</au><au>Labzovskaya, M. E.</au><au>Lisachenko, A. A.</au><au>Mogunov, Ya. A.</au><au>Nazarov, D. V.</au><au>Novikov, B. V.</au><au>Romanychev, A. I.</au><au>Serov, A. Yu</au><au>Smirnov, A. N.</au><au>Titov, V. V.</au><au>Filosofov, N. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence Spectra of thin Zno films grown by ALD technology</atitle><jtitle>Physics of the solid state</jtitle><stitle>Phys. Solid State</stitle><date>2015-09-01</date><risdate>2015</risdate><volume>57</volume><issue>9</issue><spage>1865</spage><epage>1869</epage><pages>1865-1869</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063783415090036</doi><tpages>5</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1063-7834 |
ispartof | Physics of the solid state, 2015-09, Vol.57 (9), p.1865-1869 |
issn | 1063-7834 1090-6460 |
language | eng |
recordid | cdi_gale_infotracmisc_A454609205 |
source | Springer Nature Link eJournals |
subjects | Dielectric films Lasers Low-Dimensional Systems Photoluminescence Physics Physics and Astronomy Silicon Solid State Physics Thin films Zinc oxide |
title | Photoluminescence Spectra of thin Zno films grown by ALD technology |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T13%3A40%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photoluminescence%20Spectra%20of%20thin%20Zno%20films%20grown%20by%20ALD%20technology&rft.jtitle=Physics%20of%20the%20solid%20state&rft.au=Akopyan,%20I.%20Kh&rft.date=2015-09-01&rft.volume=57&rft.issue=9&rft.spage=1865&rft.epage=1869&rft.pages=1865-1869&rft.issn=1063-7834&rft.eissn=1090-6460&rft_id=info:doi/10.1134/S1063783415090036&rft_dat=%3Cgale_cross%3EA454609205%3C/gale_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A454609205&rfr_iscdi=true |