Photoluminescence Spectra of thin Zno films grown by ALD technology

The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic or...

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Veröffentlicht in:	Physics of the solid state 2015-09, Vol.57 (9), p.1865-1869
Hauptverfasser:	Akopyan, I. Kh, Davydov, V. Yu, Labzovskaya, M. E., Lisachenko, A. A., Mogunov, Ya. A., Nazarov, D. V., Novikov, B. V., Romanychev, A. I., Serov, A. Yu, Smirnov, A. N., Titov, V. V., Filosofov, N. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Dielectric films Lasers Low-Dimensional Systems Photoluminescence Physics Physics and Astronomy Silicon Solid State Physics Thin films Zinc oxide
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.
ISSN:	1063-7834 1090-6460
DOI:	10.1134/S1063783415090036