Photon-assisted spectroscopy of dirac electrons in graphene

The quantum Goos-Hanchen effect in graphene is investigated. The Goos-Hanchen phase shift is derived by solving the Dirac eigenvalue differential equation. This phase shift varies with the angle of incidence of the quasiparticle Dirac fermions on the barrier. Calculations show that the dependence of the phase shift on the angle of incidence is sensitive to the variation of the energy gap of graphene, the applied magnetic field and the frequency of the electromagnetic waves. The present results show that the conducting states in the sidebands is very effective in the phase shift for frequencies of the applied electromagnetic field. This investigation is very important for the application of graphene in nanoelectronics and nanophotonics.