Analysis of Oxide Capacitance Changes Based on the Formation–Annihilation of Conductive Filaments in a SiO[sub.2]/Si-NCs/SiO[sub.2] Stack Layer-Based MIS-like Capacitor

This work reports on the correlation between resistive switching (RS) with capacitance switching (CS) states observed in SiO[sub.2]/Si-nanocrystals (Si-NCs)/SiO[sub.2] stack layers using a metal-insulating semiconductor (MIS)-like device. The formation of Si-NCs, which act as conductive nodes, of ab...

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Veröffentlicht in:Journal of composites science 2024-12, Vol.8 (12)
Hauptverfasser: Germán-Martínez, J. Miguel, González-Flores, K. E, Palacios-Márquez, B, Mendoza-Ramírez, C, Moreno, M, Hernández-Martínez, L, Morales-Sánchez, A
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Sprache:eng
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Zusammenfassung:This work reports on the correlation between resistive switching (RS) with capacitance switching (CS) states observed in SiO[sub.2]/Si-nanocrystals (Si-NCs)/SiO[sub.2] stack layers using a metal-insulating semiconductor (MIS)-like device. The formation of Si-NCs, which act as conductive nodes, of about 6.7 nm in size was confirmed using a transmission electron microscope. These devices exhibit bipolar RS properties with an intermediate resistive state (IRS), which is a self-compliance behavior related to the presence of the Si-NCs layer. The current value changes from 40 nA to 550 µA, indicating RS from a high resistance state (HRS) to a low resistance state (LRS) with the IRS at 100 µA. The accumulation (C[sub.A]) and inversion capacitance (C[sub.I]) also change when these RS events occur. The C[sub.A] switches from 2.52 nF to 3 nF with an intermediate CS of 2.7 nF for the HRS, LRS, and IRS, respectively. The C[sub.I] also switches from 0.23 nF to 0.6 nF for the HRS and LRS, respectively. These devices show an ON/OFF current ratio of 10[sup.4] with retention times of 10[sup.4] s. Furthermore, both C[sub.A] and C[sub.I] states remained stable for more than 10[sup.3] s. These findings highlight the potential of these devices for applications in information storage through memristor and memcapacitor technologies.
ISSN:2504-477X
2504-477X
DOI:10.3390/jcs8120487