MnBi[sub.2]Te[sub.4] Thin-Film Photodetector with a Millisecond Response Speed and Long-Term Air Stability

Topological materials with well-defined surfaces and edges have become a prominent research topic. As topological insulators, MnBi[sub.2]Te[sub.4] thin films, with their unique surfaces, exhibit exceptional electron transport properties and good applicability in low-noise, high-sensitivity photoelectric detection. This paper reports a straightforward, efficient, and cost-effective thermal evaporation method for preparing quantum MnBi[sub.2]Te[sub.4] thin films, along with an investigation into their photoelectric detection performance. These films can be used to fabricate array devices, with the resulting photodetectors achieving a response current of 97 mA W[sup.−1] at room temperature and a response speed of 30 d, with the photoelectric performance degrading by