High Efficiency Light-Emitting Diodes with Bragg and Mirror Reflectors

High Efficiency Light-Emitting Diodes with Bragg and Mirror Reflectors

Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostractures grown by the MOCVD technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al.sub.0.9Ga.sub.0.1As/Al.sub.0.1Ga.sub.0.9As Bragg h...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2023-05, Vol.57 (5), p.252
Hauptverfasser: Malevskaya, A. V, Kalyuzhnyy, N. A, Mintairov, S. A, Salii, R. A, Malevskii, D. A, Nakhimovich, M. V, Larionov, V. R
Format: Artikel
Sprache:eng
Schlagworte:
Chemical vapor deposition
Light-emitting diodes
Quantum wells
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostractures grown by the MOCVD technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al.sub.0.9Ga.sub.0.1As/Al.sub.0.1Ga.sub.0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency EQE = 37.5% at current densities greater than >10 A/cm.sup.2 have been fabricated.
ISSN:1063-7826
DOI:10.1134/S106378262307014X