Magnetic, Antiferroelectric-like Behavior and Resistance Switching Properties in BiFeO[sub.3]-CaMnO[sub.3] Polycrystalline Thin Films

The effect of ferromagnetic CaMnO[sub.3] (CMO) addition to structural, magnetic, dielectric, and ferroelectric properties of BiFeO[sub.3] is presented. X-ray diffraction and Raman investigation allowed the identification of a single pseudocubic perovskite structure. The magnetic measurement showed that the prepared films exhibit a ferromagnetic behavior at a low temperature with both coercive field and remnant magnetization increased with increasing CMO content. However, a deterioration of magnetization was observed at room temperature. Ferroelectric study revealed an antiferroelectric-like behavior with a pinched P–E hysteresis loop for 5% CMO doping BFO, resulting in low remnant polarization and double hysteresis loops. Whereas, high remnant polarization and coercive field with a likely square hysteresis loop are obtained for 10% CMO addition. Furthermore, a bipolar resistive switching behavior with a threshold voltage of about 1.8 V is observed for high doped film that can be linked to the ferroelectric polarization switching.