Mono- and Co-Doped Mn-Doped CsPbCl[sub.3] Perovskites with Enhanced Doping Efficiency and Photoluminescent Performance

To investigate the effect of Mn and other metal dopants on the photoelectronic performance of CsPbCl[sub.3] perovskites, we conducted a series of theoretical analyses. Our findings showed that after Mn mono-doping, the CsPbCl[sub.3] lattice contracted and the bonding strength increased, resulting in...

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Veröffentlicht in:Materials 2023-08, Vol.16 (16)
Hauptverfasser: Jiang, Hao, Zhao, Yiting, Liu, Fangchao, Yan, Yongqi, Ma, Yinuo, Bao, Hexin, Wu, Zhongchen, Cong, Wei-Yan, Lu, Ying-Bo
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Sprache:eng
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Zusammenfassung:To investigate the effect of Mn and other metal dopants on the photoelectronic performance of CsPbCl[sub.3] perovskites, we conducted a series of theoretical analyses. Our findings showed that after Mn mono-doping, the CsPbCl[sub.3] lattice contracted and the bonding strength increased, resulting in a more compact structure of the metal octahedral cage. The relaxation of the metal octahedral cage, along with the Jahn–Teller effect, results in a decrease in lattice strain between the octahedra and a reduction in the energy of the entire lattice due to the deformation of the metal octahedron. These three factors work together to reduce intrinsic defects and enhance the stability and electronic properties of CsPbCl[sub.3] perovskites. The solubility of the Mn dopant is significantly increased when co-doped with Ni, Fe, and Co dopants, as it compensates for the lattice strain induced by Mn. Doping CsPbCl[sub.3] perovskites reduces the band gap due to the decreased contributions of 3d orbitals from the dopants. Our analyses have revealed that strengthening the CsPbCl[sub.3] lattice and reducing intrinsic defects can result in improved stability and PL properties. Moreover, increasing Mn solubility and decreasing the bandgap can enhance the PLQY of orange luminescence in CsPbCl[sub.3] perovskites. These findings offer valuable insights for the development of effective strategies to enhance the photoelectronic properties of these materials.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma16165545