Investigation on Iβ/I-Ga[sub.2]O[sub.3]-Based Schottky Barrier Diode with Floating Metal Rings

In this study, the performance of Schottky barrier diodes (SBD) based on β-Ga[sub.2]O[sub.3] with floating metal rings (FMR) was investigated using numerical simulations with Technology Computer-Aided Design (TCAD) software. The simulation parameters of β-Ga[sub.2]O[sub.3], including those in barrier lowering, impact ionization, and image-force-lowering models, were extracted from experimental results. Similar forward conduction characteristics to SBDs without FMRs were exhibited by the device, and its breakdown characteristics were influenced by structural parameters such as FMR spacing, width, number, epitaxial layer thickness, and doping concentration. A breakdown voltage of 2072 V was achieved by the optimized device at a doping concentration of 10[sup.16] cm[sup.−3], which was 2.5 times higher than that of a device without FMRs. This study also indicated that for general doping concentrations and epitaxial layer thicknesses, the breakdown voltage with such structures can reach at least 1.5 times higher than that of a device without FMRs. Overall, insights into optimizing the design of β-Ga[sub.2]O[sub.3]-based SBDs with FMRs were provided in this study.