On the Photoconductivity of p-GaSe Layered Semiconductors and a Multiband Photoreceiver of Light on Their Basis

- The principal characteristics of intrinsic photoconductivity and the spectra of negative photoconductivity induced by impurity photoconductivity and the infrared quenching of intrinsic photoconductivity in p-type GaSe single crystals doped with the rare-earth elements (REEs) gadolinium and dysprosium at N = 0-10.sup.-1 at % are experimentally investigated. It is shown that the instability and irreproducibility of the photoelectric characteristics of this semiconductor are due to fluctuations in the electric potential associated with the presence of random macroscopic defects. The dependence of the photoelectric parameters and characteristics on N, as well as ensuring a high degree of their stability and reproducibility at N [almost equal to] 10.sup.-1 at %, are associated with corresponding changes in the fluctuations of the electric potential and the fraction of covalent bonds between layers depending on N. The possibility of creating a multiband photodetector of light with stable reproducible parameters and characteristics based on p-type GaSe- at N = 10.sup.-2-10.sup.-1 at % is shown.