Spatial and Hyperfine Characteristics of SiV.sup.- and SiV.sup.0 Color Centers in Diamond: DFT Simulation
One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of "fast" qubits, while nuclear spins of nearby .sup.13C atoms can store quantum information for a very long...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020-12, Vol.54 (12), p.1685 |
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Sprache: | eng |
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Zusammenfassung: | One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of "fast" qubits, while nuclear spins of nearby .sup.13C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged "silicon-vacancy" (SiV.sup.-) and neutral (SiV.sup.0) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C.sub.128[SiV]H.sub.98 along with their comparison with available experimental data. |
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ISSN: | 1063-7826 |
DOI: | 10.1134/S1063782620120271 |