Plasmon-Acoustic Transducers Based on Graphene–2D Boron Nitride Structures for the Terahertz-Frequency Range
Graphene and 2D hexagonal boron nitride isomorphic to it are promising materials for application in nanoacoustics. Therefore, more detailed study on the possibilities of the development of plasmon-acoustic transducers for nanoacoustics with corresponding numerical estimations of their technical char...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020-12, Vol.54 (13), p.1770-1774 |
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Sprache: | eng |
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Zusammenfassung: | Graphene and 2D hexagonal boron nitride isomorphic to it are promising materials for application in nanoacoustics. Therefore, more detailed study on the possibilities of the development of plasmon-acoustic transducers for nanoacoustics with corresponding numerical estimations of their technical characteristics seems urgent. In this work, the possibility in principle of forming plasmon-acoustic transducers for nanoacoustic devices operating in the terahertz-frequency range is substantiated theoretically and via numerical calculations. A plasmon-acoustic transducer consisting of two subsystems, notably, piezoelectric and plasmon-polariton subsystems, is investigated as the analyzed model. The piezoelectric subsystem is made in the form of a hexagonal boron-nitride nanoribbon—an acoustic duct, the end part of which serves as a piezoelectric transducer exciting elastic waves of the terahertz range. The acoustic duct is overlapped with the plasmon-polariton subsystem in the form of a graphene nanoribbon, in which TM-polarized surface plasmon-polaritons propagate. The introduced electrical impedance of the piezoelectric subsystem and characteristic impedance of the plasmon-polariton subsystem are calculated. It is shown that their values can provide the optimal coordination of a load (the acoustic duct) with the plasmon-polariton waveguide. It is found that graphene nanoplasmonics and nanoacoustics based on piezoelectric planar boron nitride combine well with each other. This opens up broad opportunities for the development of a new class of nanoelectronic devices. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782620130059 |