Polarization Processes in Thin Layers of Amorphous MoS.sub.2 Obtained by RF Magnetron Sputtering

The polarization processes in thin layers of amorphous molybdenum disulfide MoS.sub.2 are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarizat...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-05, Vol.54 (5), p.558
Hauptverfasser: Kononov, A. A, Castro-Arata, R. A, Glavnaya, D. D, Stozharov, V. M, Dolginsev, D. M, Saito, Y, Fons, P
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The polarization processes in thin layers of amorphous molybdenum disulfide MoS.sub.2 are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization process, as well as the activation energies E.sub.a and E.sub.[sigma] of the relaxation process and conductivity, respectively, are determined. The fact that the two activation energies are close to each other suggests that the processes of relaxation and charge transport are driven by the same mechanism.
ISSN:1063-7826
DOI:10.1134/S1063782620050073