RAMAN SCATTERING OF [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] FILMS OBTAINED BY THE SELENIZATION METHOD
The [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] films 0.6-1.5 [micro]m thick have been prepared at selenization temperatures from 300[degrees]C to 500[degrees]C and studied by Raman spectroscopy methods. The interval of the selenization temperatures and the minimum thickness of the metal layer necessary...
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| Veröffentlicht in: | Russian physics journal 2020-01, Vol.62 (9), p.1674 |
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| container_title | Russian physics journal |
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| creator | Gadzhiev, T.M Bilalov, B.A Aliev, M.A Gadzhieva, R.M Aliev, G.A |
| description | The [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] films 0.6-1.5 [micro]m thick have been prepared at selenization temperatures from 300[degrees]C to 500[degrees]C and studied by Raman spectroscopy methods. The interval of the selenization temperatures and the minimum thickness of the metal layer necessary for the preparation of a high-quality thin [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] film are established. It is shown that the [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] films prepared by the proposed technology can successfully be used as an active photosensitive layer of highly efficient solar radiation converters. Keywords: Raman scattering, thin films, solar cells, selenization, vibrational modes. |
| doi_str_mv | 10.1007/s11182-020-01891-1 |
| format | Article |
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The interval of the selenization temperatures and the minimum thickness of the metal layer necessary for the preparation of a high-quality thin [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] film are established. It is shown that the [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] films prepared by the proposed technology can successfully be used as an active photosensitive layer of highly efficient solar radiation converters. 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The interval of the selenization temperatures and the minimum thickness of the metal layer necessary for the preparation of a high-quality thin [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] film are established. It is shown that the [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] films prepared by the proposed technology can successfully be used as an active photosensitive layer of highly efficient solar radiation converters. 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The interval of the selenization temperatures and the minimum thickness of the metal layer necessary for the preparation of a high-quality thin [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] film are established. It is shown that the [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] films prepared by the proposed technology can successfully be used as an active photosensitive layer of highly efficient solar radiation converters. Keywords: Raman scattering, thin films, solar cells, selenization, vibrational modes.</abstract><pub>Springer</pub><doi>10.1007/s11182-020-01891-1</doi></addata></record> |
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| subjects | Analysis Dielectric films Methods Radiation Raman spectroscopy Solar energy Thin films |
| title | RAMAN SCATTERING OF [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] FILMS OBTAINED BY THE SELENIZATION METHOD |
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