RAMAN SCATTERING OF [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] FILMS OBTAINED BY THE SELENIZATION METHOD

The [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] films 0.6-1.5 [micro]m thick have been prepared at selenization temperatures from 300[degrees]C to 500[degrees]C and studied by Raman spectroscopy methods. The interval of the selenization temperatures and the minimum thickness of the metal layer necessary for the preparation of a high-quality thin [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] film are established. It is shown that the [CuIn.sub.0.95][Ga.sub.0.05][Se.sub.2] films prepared by the proposed technology can successfully be used as an active photosensitive layer of highly efficient solar radiation converters. Keywords: Raman scattering, thin films, solar cells, selenization, vibrational modes.