Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on p,-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE. (XXV INTERNATIONAL SYMPOSIUM "NANOSTRUCTURES: PHYSICS AND TECHNOLOGY", SAINT PETERSBURG, RUSSIA, JUNE 26-30, 2017

We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates ([mu]-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the [mu]-CPSSs and followed by growth of 1-[micro]m-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (0001) oriented sapphire surface. Both micro-photoluminescence and micro- cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography. DOI: 10.1134/S1063782618050123