A NEW METHOD OF OBTAINING AN n-p-STRUCTURE ON THE BASIS OF THE DEFECTIVE SEMICONDUCTOR Ag[In.sub.5][S.sub.8]

The type of electrical conductivity of [A.sup.1][B.sup.3.sub.5][C.sup.6.sub.8] semiconductor compounds with defective crystalline structure is modified by the influence of powerful laser radiation. It is shown that at certain power and wavelength of laser radiation acting on the single-crystal n-Ag[In.sub.5][S.sub.8], an area with the p-type of conductivity is formed in the irradiated region of the crystal. Current-voltage characteristics of homo-junctions created on the basis of n- Ag[In.sub.5][S.sub.8] are recorded. Keywords: defective semiconductor, n-p-structure, laser, annealing, current- voltage characteristic