Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions
Amorphous silicon (a-Si) produced on surfaces of single-crystal substrates (c-Si) by low-energy low-dose implantation of silver ions is studied by spectral ellipsometry and electron backscatter diffraction. Implantation was done with an ion energy of 30 keV at a constant ion beam current density of...
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| Veröffentlicht in: | Journal of applied spectroscopy 2016-03, Vol.83 (1), p.47-50 |
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| container_title | Journal of applied spectroscopy |
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| creator | Bazarov, V. V. Nuzhdin, V. I. Valeev, V. F. Vorobev, V. V. Osin, Yu. N. Stepanov, A. L. |
| description | Amorphous silicon (a-Si) produced on surfaces of single-crystal substrates (c-Si) by low-energy low-dose implantation of silver ions is studied by spectral ellipsometry and electron backscatter diffraction. Implantation was done with an ion energy of 30 keV at a constant ion beam current density of 2 μA/cm
2
and doses of 6.24·10
12
–1.25·10
16
ions/cm
2
on room temperature substrate targets. Irradiation was carried out with a current density of 0.1–5 μA/cm
2
for implantation doses of 6.24·10
13
and 1.87·10
14
ions/cm
2
. It was found that spectral ellipsometry is an accurate andreliable method for monitoring low-dose ion implantation processes. |
| doi_str_mv | 10.1007/s10812-016-0240-2 |
| format | Article |
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2
and doses of 6.24·10
12
–1.25·10
16
ions/cm
2
on room temperature substrate targets. Irradiation was carried out with a current density of 0.1–5 μA/cm
2
for implantation doses of 6.24·10
13
and 1.87·10
14
ions/cm
2
. It was found that spectral ellipsometry is an accurate andreliable method for monitoring low-dose ion implantation processes.</description><identifier>ISSN: 0021-9037</identifier><identifier>EISSN: 1573-8647</identifier><identifier>DOI: 10.1007/s10812-016-0240-2</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Analysis ; Analytical Chemistry ; Atomic/Molecular Structure and Spectra ; Physics ; Physics and Astronomy ; Silicon</subject><ispartof>Journal of applied spectroscopy, 2016-03, Vol.83 (1), p.47-50</ispartof><rights>Springer Science+Business Media New York 2016</rights><rights>COPYRIGHT 2016 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-d29cfc8c4665acfed704d937ec57aced2290785b59f0cb36e6a5a29e76558fe23</citedby><cites>FETCH-LOGICAL-c361t-d29cfc8c4665acfed704d937ec57aced2290785b59f0cb36e6a5a29e76558fe23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10812-016-0240-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10812-016-0240-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Bazarov, V. V.</creatorcontrib><creatorcontrib>Nuzhdin, V. I.</creatorcontrib><creatorcontrib>Valeev, V. F.</creatorcontrib><creatorcontrib>Vorobev, V. V.</creatorcontrib><creatorcontrib>Osin, Yu. N.</creatorcontrib><creatorcontrib>Stepanov, A. L.</creatorcontrib><title>Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions</title><title>Journal of applied spectroscopy</title><addtitle>J Appl Spectrosc</addtitle><description>Amorphous silicon (a-Si) produced on surfaces of single-crystal substrates (c-Si) by low-energy low-dose implantation of silver ions is studied by spectral ellipsometry and electron backscatter diffraction. Implantation was done with an ion energy of 30 keV at a constant ion beam current density of 2 μA/cm
2
and doses of 6.24·10
12
–1.25·10
16
ions/cm
2
on room temperature substrate targets. Irradiation was carried out with a current density of 0.1–5 μA/cm
2
for implantation doses of 6.24·10
13
and 1.87·10
14
ions/cm
2
. It was found that spectral ellipsometry is an accurate andreliable method for monitoring low-dose ion implantation processes.</description><subject>Analysis</subject><subject>Analytical Chemistry</subject><subject>Atomic/Molecular Structure and Spectra</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silicon</subject><issn>0021-9037</issn><issn>1573-8647</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kTFPwzAQhS0EEqXwA9iyMgTOTmwnYykFKiEhUZgt45yLIU0q2wX673EUFhbkwdK79_nu_Ag5p3BJAeRVoFBRlgMVObAScnZAJpTLIq9EKQ_JBIDRvIZCHpOTEN4BoK4YTIhfbdFEr9ts0bZuG_oNRr_PdNckYaj0XXatzUcwOkb02Y2z1msTXdJnnW73AUPW22zlWmeSttp5q03Slpttq7uITfbl4ttQ_0z4su_CKTmyug149ntPycvt4nl-nz883i3ns4fcFILGvGG1saYypRBcG4uNhLKpC4mGy9ShYawGWfFXXlswr4VAoblmNUrBeWWRFVNyOb671i0q19k-7WnSaXAzzIrWJX3GWVUKWZQyARd_gOSJ-B3XeheCWq6e_nrp6DW-D8GjVVvvNtrvFQU1JKLGRFRKRA2JqGEgNjIhebs1evXe73z6xPAP9AMPGI-L</recordid><startdate>20160301</startdate><enddate>20160301</enddate><creator>Bazarov, V. V.</creator><creator>Nuzhdin, V. I.</creator><creator>Valeev, V. F.</creator><creator>Vorobev, V. V.</creator><creator>Osin, Yu. N.</creator><creator>Stepanov, A. L.</creator><general>Springer US</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope></search><sort><creationdate>20160301</creationdate><title>Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions</title><author>Bazarov, V. V. ; Nuzhdin, V. I. ; Valeev, V. F. ; Vorobev, V. V. ; Osin, Yu. N. ; Stepanov, A. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-d29cfc8c4665acfed704d937ec57aced2290785b59f0cb36e6a5a29e76558fe23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Analysis</topic><topic>Analytical Chemistry</topic><topic>Atomic/Molecular Structure and Spectra</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bazarov, V. V.</creatorcontrib><creatorcontrib>Nuzhdin, V. I.</creatorcontrib><creatorcontrib>Valeev, V. F.</creatorcontrib><creatorcontrib>Vorobev, V. V.</creatorcontrib><creatorcontrib>Osin, Yu. N.</creatorcontrib><creatorcontrib>Stepanov, A. L.</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><jtitle>Journal of applied spectroscopy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bazarov, V. V.</au><au>Nuzhdin, V. I.</au><au>Valeev, V. F.</au><au>Vorobev, V. V.</au><au>Osin, Yu. N.</au><au>Stepanov, A. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions</atitle><jtitle>Journal of applied spectroscopy</jtitle><stitle>J Appl Spectrosc</stitle><date>2016-03-01</date><risdate>2016</risdate><volume>83</volume><issue>1</issue><spage>47</spage><epage>50</epage><pages>47-50</pages><issn>0021-9037</issn><eissn>1573-8647</eissn><abstract>Amorphous silicon (a-Si) produced on surfaces of single-crystal substrates (c-Si) by low-energy low-dose implantation of silver ions is studied by spectral ellipsometry and electron backscatter diffraction. Implantation was done with an ion energy of 30 keV at a constant ion beam current density of 2 μA/cm
2
and doses of 6.24·10
12
–1.25·10
16
ions/cm
2
on room temperature substrate targets. Irradiation was carried out with a current density of 0.1–5 μA/cm
2
for implantation doses of 6.24·10
13
and 1.87·10
14
ions/cm
2
. It was found that spectral ellipsometry is an accurate andreliable method for monitoring low-dose ion implantation processes.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10812-016-0240-2</doi><tpages>4</tpages></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Analysis Analytical Chemistry Atomic/Molecular Structure and Spectra Physics Physics and Astronomy Silicon |
| title | Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions |
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