Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions

Amorphous silicon (a-Si) produced on surfaces of single-crystal substrates (c-Si) by low-energy low-dose implantation of silver ions is studied by spectral ellipsometry and electron backscatter diffraction. Implantation was done with an ion energy of 30 keV at a constant ion beam current density of 2 μA/cm 2 and doses of 6.24·10 12 –1.25·10 16 ions/cm 2 on room temperature substrate targets. Irradiation was carried out with a current density of 0.1–5 μA/cm 2 for implantation doses of 6.24·10 13 and 1.87·10 14 ions/cm 2 . It was found that spectral ellipsometry is an accurate andreliable method for monitoring low-dose ion implantation processes.