Effect of the Surface on Transport Phenomena in PbSnTe:In/Ba[F.sub.2] Films
The effect of the surface on the I-V characteristics of PbSnTe:In film-based structures is investigated in zero magnetic field and in a magnetic field of B [less than or equal to] 4 T with different orientations, including in the mode of current limited by space charge. Analysis of the features in t...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2017-11, Vol.51 (11), p.1517 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The effect of the surface on the I-V characteristics of PbSnTe:In film-based structures is investigated in zero magnetic field and in a magnetic field of B [less than or equal to] 4 T with different orientations, including in the mode of current limited by space charge. Analysis of the features in the experimental data obtained at different magnetic-field directions and upon layer-by-layer etching of the films shows that the contributions of the free film surface and interface with the substrate to transport phenomena are significantly different and can be caused by a difference in the parameters of localization centers near these surfaces. |
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ISSN: | 1063-7826 |
DOI: | 10.1134/S1063782617110021 |