Effect of the Surface on Transport Phenomena in PbSnTe:In/Ba[F.sub.2] Films

The effect of the surface on the I-V characteristics of PbSnTe:In film-based structures is investigated in zero magnetic field and in a magnetic field of B [less than or equal to] 4 T with different orientations, including in the mode of current limited by space charge. Analysis of the features in t...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-11, Vol.51 (11), p.1517
Hauptverfasser: Akimov, A.N, Klimov, A.E, Suprun, S.P, Epov, V.S
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Sprache:eng
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Zusammenfassung:The effect of the surface on the I-V characteristics of PbSnTe:In film-based structures is investigated in zero magnetic field and in a magnetic field of B [less than or equal to] 4 T with different orientations, including in the mode of current limited by space charge. Analysis of the features in the experimental data obtained at different magnetic-field directions and upon layer-by-layer etching of the films shows that the contributions of the free film surface and interface with the substrate to transport phenomena are significantly different and can be caused by a difference in the parameters of localization centers near these surfaces.
ISSN:1063-7826
DOI:10.1134/S1063782617110021