Study of the structural and optical properties of GaP 4[degrees] substrates

Study of the structural and optical properties of GaP 4[degrees] substrates

The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4[degrees] are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation densit...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-02, Vol.51 (2), p.267
Hauptverfasser: Kryzhanovskaya, N.V, Polubavkina, Yu. S, Nevedomskiy, V.N, Nikitina, E.V, Lazarenko, A.A, Egorov, A. Yu, Maximov, M.V, Moiseev, E.I, Zhukov, A.E
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Annealing
Epitaxy
Optical properties
Photoluminescence
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Zusammenfassung:The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4[degrees] are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 x [10.sup.8] [cm.sup.-2] is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630-640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line. DOI: 10.1134/S1063782617020087
ISSN:1063-7826
DOI:10.1134/S1063782617020087