Charge transfer features and ferromagnetic order in semiconductor heterostructures [delta]-doped with manganese

The temperature and field dependences of the specific magnetization and magnetoresistance in heterostructures with a GaAs/[Ga.sub.0.84][In.sub.0.16]As/GaAs quantum well and a 5-layer of atomic Mn in the barrier layer near the quantum well filled with holes are studied. A change in the resistance and magnetization behavior upon ordering of localized magnetic moments in the cap layer due to a change in the manganese ion distribution topology is detected.