Conditions of growth of high-quality relaxed [Si.sub.1 - x][Ge.sub.x] layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
The conditions of the epitaxial growth of high-quality relaxed [Si.sub.1 - x][Ge.sub.x] layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growi...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2016-09, Vol.50 (9), p.1248 |
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| creator | Shengurov, V.G Chalkov, V.Yu Denisov, S.A Matveev, S.A Nezhdanov, A.V Mashin, A.I Filatov, D.O Stepikhova, M.V Krasilnik, Z.F |
| description | The conditions of the epitaxial growth of high-quality relaxed [Si.sub.1 - x][Ge.sub.x] layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growing [Si.sub.1 - x][Ge.sub.x] layers with a thickness of up to 2 [micro]m and larger. At reduced growth temperatures ([T.sub.S] = 325-350[degrees]C), the procedure allows the growth of [Si.sub.1 - x][Ge.sub.x] layers with a small surface roughness (rms [approximately equal to] 2 nm) and a low density of threading dislocations. The photoluminescence intensity of [Si.sub.1 - x][Ge.sub.x]:Er layers is significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions ([T.sub.S] [approximately equal to] 500[degrees]C) and possess an external quantum efficiency estimated at a level of ~0.4%. DOI: 10.1134/S1063782616090220 |
| doi_str_mv | 10.1134/S1063782616090220 |
| format | Article |
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The combined growth procedure proposed provides a means for growing [Si.sub.1 - x][Ge.sub.x] layers with a thickness of up to 2 [micro]m and larger. At reduced growth temperatures ([T.sub.S] = 325-350[degrees]C), the procedure allows the growth of [Si.sub.1 - x][Ge.sub.x] layers with a small surface roughness (rms [approximately equal to] 2 nm) and a low density of threading dislocations. The photoluminescence intensity of [Si.sub.1 - x][Ge.sub.x]:Er layers is significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions ([T.sub.S] [approximately equal to] 500[degrees]C) and possess an external quantum efficiency estimated at a level of ~0.4%. DOI: 10.1134/S1063782616090220</abstract><pub>Springer</pub><doi>10.1134/S1063782616090220</doi></addata></record> |
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| source | SpringerNature Journals |
| subjects | Epitaxy Photoluminescence |
| title | Conditions of growth of high-quality relaxed [Si.sub.1 - x][Ge.sub.x] layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire |
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