Conditions of growth of high-quality relaxed [Si.sub.1 - x][Ge.sub.x] layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

The conditions of the epitaxial growth of high-quality relaxed [Si.sub.1 - x][Ge.sub.x] layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growing [Si.sub.1 - x][Ge.sub.x] layers with a thickness of up to 2 [micro]m and larger. At reduced growth temperatures ([T.sub.S] = 325-350[degrees]C), the procedure allows the growth of [Si.sub.1 - x][Ge.sub.x] layers with a small surface roughness (rms [approximately equal to] 2 nm) and a low density of threading dislocations. The photoluminescence intensity of [Si.sub.1 - x][Ge.sub.x]:Er layers is significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions ([T.sub.S] [approximately equal to] 500[degrees]C) and possess an external quantum efficiency estimated at a level of ~0.4%. DOI: 10.1134/S1063782616090220