On the size dependence of melting parameters for silicon
Using the dependences of melting point T m and crystallization point T c on the number of atoms (N) in a spherical silicon crystal that were calculated elsewhere [6] by the method of molecular dynamics, (i) the number of atoms at which the latent heat of the solid–liquid phase transition disappears...
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Veröffentlicht in: | Technical physics 2016-05, Vol.61 (5), p.730-733 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Using the dependences of melting point
T
m
and crystallization point
T
c
on the number of atoms (N) in a spherical silicon crystal that were calculated elsewhere [6] by the method of molecular dynamics, (i) the number of atoms at which the latent heat of the solid–liquid phase transition disappears and (ii) temperature
T
0
=
T
m
(
N
0
) =
T
c
(
N
0
) below which solidifying nanoclusters remain noncrystalline are estimated. These values are found to be
N
0
= 22.8156 and
T
0
= 400.851 K. The N dependences for silicon melting parameters, namely, a jump of entropy of melting, latent melting heat, slope of the melting line, and jumps in the surface energy and volume, are derived. |
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ISSN: | 1063-7842 1090-6525 |
DOI: | 10.1134/S1063784216050157 |