Semiconductor-metal phase transition in LaBi under high pressure

The effect of pressure up to 22 GPa on the electrical resistance and thermopower of lanthanum monobismuthide at room temperature has been studied. A semiconductor-metal phase transition in the pressure range of 4–6 GPa has been revealed from the change in the sign of thermopower and the thermal depe...

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Veröffentlicht in:	Physics of the solid state 2015-08, Vol.57 (8), p.1639-1641
Hauptverfasser:	Stepanov, N. N., Morozova, N. V., Kar’kin, A. E., Korobeinikov, I. V., Golubkov, A. V., Kaminskii, V. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Phase Transitions Physics Physics and Astronomy Rare earth metals Solid State Physics
Online-Zugang:	Volltext
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Zusammenfassung:	The effect of pressure up to 22 GPa on the electrical resistance and thermopower of lanthanum monobismuthide at room temperature has been studied. A semiconductor-metal phase transition in the pressure range of 4–6 GPa has been revealed from the change in the sign of thermopower and the thermal dependence of the electrical resistance of LaBi. The observed inflections in the pressure dependences of the thermopower and electrical resistance of LaBi samples in the pressure range of 8–11 GPa can be ascribed to the structural phase transition from the B 1 phase to the PT and B 2 phases.
ISSN:	1063-7834 1090-6460
DOI:	10.1134/S1063783415080338