Magnetoelastic interaction in a ferromagnet-multiferroic system
The contribution of the elastic interaction to the total interaction energy of a ferromagnetic nanolayer with a BiFeO 3 multiferroic nanolayer has been investigated. It has been shown that this contribution amounts to less than 10% and the main contribution to the energy comes from the exchange inte...
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Veröffentlicht in: | Physics of the solid state 2015-05, Vol.57 (5), p.924-928 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The contribution of the elastic interaction to the total interaction energy of a ferromagnetic nanolayer with a BiFeO
3
multiferroic nanolayer has been investigated. It has been shown that this contribution amounts to less than 10% and the main contribution to the energy comes from the exchange interaction. The lower limit for the minimum size of a bit of magnetoresistive memory with electric-field writing (magnetoelectric random-access memory (MERAM)), which is associated with the existence of a superparamagnetic limit, has been found. If the writing is based on exchange interaction between the ferromagnetic and electrosensitive layers, the minimum bit size is 7 nm, which indicates prospects for this type of MERAM. |
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ISSN: | 1063-7834 1090-6460 |
DOI: | 10.1134/S1063783415050315 |