Defect-related luminescence in silicon [p.sup.+]--n junctions

Ultra-shallow [p.sup.+]-n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates upon their preliminary oxidation and the opening of windows in SiO2 by electron lithography and reactive ion etching...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2015-09, p.1222
Hauptverfasser:	Kuzmin, R.V, Bagraev, N.T, Klyachkin, L.E, Malyarenko, A.M
Format:	Artikel
Sprache:	eng
Schlagworte:	Electronics industry Integrated circuit fabrication Light-emitting diodes Photoluminescence Silicon
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page	1222
container_title	Semiconductors (Woodbury, N.Y.)
container_volume
creator	Kuzmin, R.V Bagraev, N.T Klyachkin, L.E Malyarenko, A.M
description	Ultra-shallow [p.sup.+]-n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates upon their preliminary oxidation and the opening of windows in SiO2 by electron lithography and reactive ion etching are examined. The electro- and photoluminescence spectra measured in the study demonstrate emission in the range 1-1.6 µm, which is indicative of the presence of a high concentration of defects that probably appear as a result of the amorphizing effect of ions in the etching stage. DOI: 10.1134/S1063782615090171
doi_str_mv	10.1134/S1063782615090171
format	Article
fullrecord	<record><control><sourceid>gale</sourceid><recordid>TN_cdi_gale_infotracacademiconefile_A452052163</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A452052163</galeid><sourcerecordid>A452052163</sourcerecordid><originalsourceid>FETCH-gale_infotracacademiconefile_A4520521633</originalsourceid><addsrcrecordid>eNqVzL0KwjAUBeAMCtafB3DLLqm5TdPWwUH8wV03ESnpraSkt6Vp318LvoCc4cAH5zC2BhkCqHh7A5moNIsS0HInIYUJC0YSo83Y3PtKSoBMxwHbn7BE04sOXd5jwd1QW0JvkAxyS9xbZ01D_NGGfmjDzVMI4tVAprcN-SWblrnzuPr1goWX8_14Fe_c4ctS2fRdbr4psB5vsLRfP8Q6kjqCRKm_Bx-QyURA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Defect-related luminescence in silicon [p.sup.+]--n junctions</title><source>SpringerNature Journals</source><creator>Kuzmin, R.V ; Bagraev, N.T ; Klyachkin, L.E ; Malyarenko, A.M</creator><creatorcontrib>Kuzmin, R.V ; Bagraev, N.T ; Klyachkin, L.E ; Malyarenko, A.M</creatorcontrib><description>Ultra-shallow [p.sup.+]-n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates upon their preliminary oxidation and the opening of windows in SiO2 by electron lithography and reactive ion etching are examined. The electro- and photoluminescence spectra measured in the study demonstrate emission in the range 1-1.6 µm, which is indicative of the presence of a high concentration of defects that probably appear as a result of the amorphizing effect of ions in the etching stage. DOI: 10.1134/S1063782615090171</description><identifier>ISSN: 1063-7826</identifier><identifier>DOI: 10.1134/S1063782615090171</identifier><language>eng</language><publisher>Springer</publisher><subject>Electronics industry ; Integrated circuit fabrication ; Light-emitting diodes ; Photoluminescence ; Silicon</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2015-09, p.1222</ispartof><rights>COPYRIGHT 2015 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kuzmin, R.V</creatorcontrib><creatorcontrib>Bagraev, N.T</creatorcontrib><creatorcontrib>Klyachkin, L.E</creatorcontrib><creatorcontrib>Malyarenko, A.M</creatorcontrib><title>Defect-related luminescence in silicon [p.sup.+]--n junctions</title><title>Semiconductors (Woodbury, N.Y.)</title><description>Ultra-shallow [p.sup.+]-n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates upon their preliminary oxidation and the opening of windows in SiO2 by electron lithography and reactive ion etching are examined. The electro- and photoluminescence spectra measured in the study demonstrate emission in the range 1-1.6 µm, which is indicative of the presence of a high concentration of defects that probably appear as a result of the amorphizing effect of ions in the etching stage. DOI: 10.1134/S1063782615090171</description><subject>Electronics industry</subject><subject>Integrated circuit fabrication</subject><subject>Light-emitting diodes</subject><subject>Photoluminescence</subject><subject>Silicon</subject><issn>1063-7826</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqVzL0KwjAUBeAMCtafB3DLLqm5TdPWwUH8wV03ESnpraSkt6Vp318LvoCc4cAH5zC2BhkCqHh7A5moNIsS0HInIYUJC0YSo83Y3PtKSoBMxwHbn7BE04sOXd5jwd1QW0JvkAxyS9xbZ01D_NGGfmjDzVMI4tVAprcN-SWblrnzuPr1goWX8_14Fe_c4ctS2fRdbr4psB5vsLRfP8Q6kjqCRKm_Bx-QyURA</recordid><startdate>20150901</startdate><enddate>20150901</enddate><creator>Kuzmin, R.V</creator><creator>Bagraev, N.T</creator><creator>Klyachkin, L.E</creator><creator>Malyarenko, A.M</creator><general>Springer</general><scope/></search><sort><creationdate>20150901</creationdate><title>Defect-related luminescence in silicon [p.sup.+]--n junctions</title><author>Kuzmin, R.V ; Bagraev, N.T ; Klyachkin, L.E ; Malyarenko, A.M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-gale_infotracacademiconefile_A4520521633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Electronics industry</topic><topic>Integrated circuit fabrication</topic><topic>Light-emitting diodes</topic><topic>Photoluminescence</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuzmin, R.V</creatorcontrib><creatorcontrib>Bagraev, N.T</creatorcontrib><creatorcontrib>Klyachkin, L.E</creatorcontrib><creatorcontrib>Malyarenko, A.M</creatorcontrib><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kuzmin, R.V</au><au>Bagraev, N.T</au><au>Klyachkin, L.E</au><au>Malyarenko, A.M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Defect-related luminescence in silicon [p.sup.+]--n junctions</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2015-09-01</date><risdate>2015</risdate><spage>1222</spage><pages>1222-</pages><issn>1063-7826</issn><abstract>Ultra-shallow [p.sup.+]-n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates upon their preliminary oxidation and the opening of windows in SiO2 by electron lithography and reactive ion etching are examined. The electro- and photoluminescence spectra measured in the study demonstrate emission in the range 1-1.6 µm, which is indicative of the presence of a high concentration of defects that probably appear as a result of the amorphizing effect of ions in the etching stage. DOI: 10.1134/S1063782615090171</abstract><pub>Springer</pub><doi>10.1134/S1063782615090171</doi></addata></record>
fulltext	fulltext
identifier	ISSN: 1063-7826
ispartof	Semiconductors (Woodbury, N.Y.), 2015-09, p.1222
issn	1063-7826
language	eng
recordid	cdi_gale_infotracacademiconefile_A452052163
source	SpringerNature Journals
subjects	Electronics industry Integrated circuit fabrication Light-emitting diodes Photoluminescence Silicon
title	Defect-related luminescence in silicon [p.sup.+]--n junctions
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T17%3A18%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Defect-related%20luminescence%20in%20silicon%20%5Bp.sup.+%5D--n%20junctions&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Kuzmin,%20R.V&rft.date=2015-09-01&rft.spage=1222&rft.pages=1222-&rft.issn=1063-7826&rft_id=info:doi/10.1134/S1063782615090171&rft_dat=%3Cgale%3EA452052163%3C/gale%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A452052163&rfr_iscdi=true