Defect-related luminescence in silicon [p.sup.+]--n junctions

Ultra-shallow [p.sup.+]-n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates upon their preliminary oxidation and the opening of windows in SiO2 by electron lithography and reactive ion etching are examined. The electro- and photoluminescence spectra measured in the study demonstrate emission in the range 1-1.6 µm, which is indicative of the presence of a high concentration of defects that probably appear as a result of the amorphizing effect of ions in the etching stage. DOI: 10.1134/S1063782615090171