Site-controlled growth of single IpP QDs

Site-controlled growth of single IpP QDs

The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate "defects" formed by a focused beam of [Ga.sup.+] ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 [(µm).sup.-2] can be obtained in the InP/GaInP system. It is demonstrated that effective lumine...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-08, p.1095
Hauptverfasser: Vlasov, A.S, Mintairov, A.M, Kalyuzhnyy, N.A, Mintairov, S.A, Salii, R.A, Denisyuk, A.I, Babunts, R.A
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxy
Gallium arsenide
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Zusammenfassung:The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate "defects" formed by a focused beam of [Ga.sup.+] ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 [(µm).sup.-2] can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer. DOI: 10.1134/S1063782615080230
ISSN:1063-7826
DOI:10.1134/S1063782615080230