Comparative analysis of breakdown mechanism in thin Si[O.sub.2] oxide films in metal--oxide--semiconductor structures under the action of heavy charged particles and a pulsed voltage

Regularities in the breakdown of thin Si[O.sub.2] oxide films in metal-oxide-semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative analysis of physical mechanisms and energy criteria of the Si[O.sub.2] breakdown in extreme conditions of excitation of the electron subsystem in the subpicosecond time range. DOI: 10.1134/S1063784216020286