The Shubnikov--de Haas Effect and thermoelectric properties of Tl-Doped [Sb.sub.2][Te.sub.3] and [Bi.sub.2][Se.sub.3]

The influence of doping with Tl on the Shubnikov--de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-[Sb.sub.2-x] [Tl.sub.x][Te.sub.3] (x = 0, 0.005, 0.015, and 0.05) and n-[Bi.sub.2- x][Tl.sub.x][Se.sub.3] (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cros...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-06, p.767
Hauptverfasser: Kulbachinskii, V.A, Kudryashov, A.A, Kytin, V.G
Format: Artikel
Sprache:eng
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Zusammenfassung:The influence of doping with Tl on the Shubnikov--de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-[Sb.sub.2-x] [Tl.sub.x][Te.sub.3] (x = 0, 0.005, 0.015, and 0.05) and n-[Bi.sub.2- x][Tl.sub.x][Se.sub.3] (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in [Sb.sub.2- x][Tl.sub.x][Te.sub.3] due to the donor effect of Tl and the electron concentration in n-[Bi.sub.2- x][Tl.sub.x][Se.sub.3] decreases due to the acceptor effect of Tl. The temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77-300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-[Sb.sub.2-x][Tl.sub.x][Te.sub.3] and in n-[Bi.sub.2-x][Tl.sub.x][Se.sub.3]. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl. DOI:10.1134/S1063782615060135
ISSN:1063-7826
DOI:10.1134/S1063782615060135