Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon

This paper presents the results of the infrared spectroscopic study of silicon carbide epitaxial layers grown by the substitution of atoms on the surface of single-crystal silicon. It has been found that, in the infrared spectra, there is a band at 798 cm –1 , which corresponds to a transverse optical (TO) phonon in the lattice of silicon carbide. The parameters of disordered silicon carbide on the surface of pores between the epitaxial layer of silicon carbide and the silicon substrate have been determined. It has been revealed that, in the infrared spectra of silicon carbide, there is a band in the wavenumber range of 960 cm –1 . A hypothesis has been proposed, according to which this band corresponds to the energy of the previously theoretically predicted elastic dipole consisting of an elastically interacting carbon atom located in an interstitial position and a silicon vacancy.