Electrical resistivity and Hall effect in lanthanum monobismuthide in magnetic fields to 13 T

Electrical resistivity and Hall effect in lanthanum monobismuthide in magnetic fields to 13 T

The electrical resistivity, the Hall effect, the free charge carrier mobility, and their field dependences have been studied in lanthanum monobismuthide (LaBi) over the temperature range of 1.7–300 K in magnetic fields to 13 T. For comparison, similar measurements have been performed on samples of l...

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Veröffentlicht in:Physics of the solid state 2015-12, Vol.57 (12), p.2369-2372
Hauptverfasser: Stepanov, N. N., Morozova, N. V., Kar’kin, A. E., Golubkov, A. V., Kaminskii, V. V.
Format: Artikel
Sprache:eng
Schlagworte:
Electron transport
Lanthanum
Magnetic fields
Physics
Physics and Astronomy
Semiconductors
Solid State Physics
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Zusammenfassung:The electrical resistivity, the Hall effect, the free charge carrier mobility, and their field dependences have been studied in lanthanum monobismuthide (LaBi) over the temperature range of 1.7–300 K in magnetic fields to 13 T. For comparison, similar measurements have been performed on samples of lanthanum monotelluride (LaTe). It has been shown that LaBi is a semiconducting material with a complex structure of the conduction band.
ISSN:1063-7834
1090-6460
DOI:10.1134/S106378341512032X