Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface

We study the effect of bombardment with Ar + and Ba + ions on the composition and electron structure of the CdTe film surface. The optimal ion implantation and annealing regimes for obtaining a nanofilm of the Cd 0.5 Ba 0.5 Te type are determined. It is found that the value of E g of the three-compo...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Technical physics 2015-12, Vol.60 (12), p.1880-1883
Hauptverfasser:	Mukhtarov, Z. E., Isakhanov, Z. A., Umirzakov, B. E., Kodirov, T., Ergashev, E. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Annealing Classical and Continuum Physics Dielectric films Physics Physics and Astronomy Short Communications Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We study the effect of bombardment with Ar + and Ba + ions on the composition and electron structure of the CdTe film surface. The optimal ion implantation and annealing regimes for obtaining a nanofilm of the Cd 0.5 Ba 0.5 Te type are determined. It is found that the value of E g of the three-component film decreases from 1.9 to 1.7 eV upon an increase in its thickness from 20 to 40 nm.
ISSN:	1063-7842 1090-6525
DOI:	10.1134/S1063784215120130