Effect of the thickness of the Ti[O.sub.x]/Ti[O.sub.2] layers on their memristor properties

Effect of the thickness of the Ti[O.sub.x]/Ti[O.sub.2] layers on their memristor properties

The effect of the layer thickness of the Ti[O.sub.x]/Ti[O.sub.2] heterostructure on its memristor properties is investigated. The dependence of the stoichiometry index of the prepared layers on their thickness is analyzed using Auger spectroscopy. The dependence of ratio [R.sub.off]/[R.sub.on] of th...

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Veröffentlicht in:Technical physics 2015-01, p.112
Hauptverfasser: Emel'yanov, A.V, Demin, V.A, Antropov, I.M, Tselikov, G.I, Lavrukhina, Z.V, Kashkarov, P.K
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Sprache:eng
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Zusammenfassung:The effect of the layer thickness of the Ti[O.sub.x]/Ti[O.sub.2] heterostructure on its memristor properties is investigated. The dependence of the stoichiometry index of the prepared layers on their thickness is analyzed using Auger spectroscopy. The dependence of ratio [R.sub.off]/[R.sub.on] of the resistances in the high- and low- resistance states of a memristor element on the thickness of its layers is nonmonotonic. The highest value of [R.sub.off]/[R.sub.on] = 200 was attained for identical thickness of the Ti[O.sub.x] and Ti[O.sub.2] layers, equal to 30 nm. DOI: 10.1134/S1063784215010077
ISSN:1063-7842
DOI:10.1134/S1063784215010077