On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures

The mechanism of electron transport in amorphous-crystalline heterostructures fabricated on the basis of high-resistivity p -Si is considered in order to explain the features of experimental photosensitivity spectra for the specified structures prepared on substrates with various resistivities. The...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2014-09, Vol.48 (9), p.1167-1173
Hauptverfasser:	Kotina, I. M., Danishevskii, A. M., Kon’kov, O. I., Terukov, E. I., Tuhkonen, L. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric properties Electrons Low-Dimensional Systems Magnetic Materials Magnetism Nuclear radiation Physics Physics and Astronomy Quantum Phenomena Semiconductor Structures Silicon
Online-Zugang:	Volltext
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