On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures

The mechanism of electron transport in amorphous-crystalline heterostructures fabricated on the basis of high-resistivity p -Si is considered in order to explain the features of experimental photosensitivity spectra for the specified structures prepared on substrates with various resistivities. The cause of the formation of an inversion layer at the heteroboundary in these structures and the effect of resistivity on the value of surface potentials is clarified. Nontrivial data on the effect of the work function of metallic contacts to an amorphous film on the mechanism of photocurrent formation are presented.