Investigation of impurity levels in thin polycrystalline SmS films

Data obtained in the study of the behavior with temperature of the electrical resistance of thin polycrystalline SmS films (thickness ∼0.5–0.8 μm) performed in the temperature region 4.2–440 K have been used to correct the band structure model of this material. It has been shown that the main impurity levels in thin polycrystalline SmS films are levels corresponding to localized states close to the conduction band bottom, as well as the impurity donor levels E i which belong to Sm ions filling vacancies in the S sublattice. The tail of localized states has been found to extend up to the energy of impurity donor levels.