Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions

The infrared radiation emitted by hot electrons in n -InGaAs/GaAs quantum-well heterostructures subjected to a lateral electric field is investigated under conditions of carrier injection from the current contacts. In structures with double tunneling-coupled wells one of which is δ-doped, a pronounc...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2014-05, Vol.48 (5), p.625-629
Hauptverfasser:	Belevskii, P. A., Vinoslavkii, M. N., Poroshin, V. N., Baidus, N. V., Zvonkov, B. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrons Low-Dimensional Systems Magnetic Materials Magnetism Nuclear radiation Physics Physics and Astronomy Quantum Phenomena Quantum wells Semiconductor Structures
Online-Zugang:	Volltext
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