Inversion of the impurity conductivity sign in [As.sub.2][Se.sub.3]:Bi films deposited by two different methods

Inversion of the impurity conductivity sign in [As.sub.2][Se.sub.3]:Bi films deposited by two different methods

It is demonstrated that [As.sub.2][Se.sub.3]:[Bi.sub.x] films deposited by thermal evaporation have p-type impurity conductivity, whereas films of the same composition, produced by ion-plasma cosputtering in vacuum exhibit n-type impurity conductivity. On the basis of these results, a new method is...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-10, Vol.46 (10), p.1296
Hauptverfasser: Almasov, N.G, Prikhodko, O. Yu, Tsendin, K.D
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Electric properties
Methods
Semiconductors
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Zusammenfassung:It is demonstrated that [As.sub.2][Se.sub.3]:[Bi.sub.x] films deposited by thermal evaporation have p-type impurity conductivity, whereas films of the same composition, produced by ion-plasma cosputtering in vacuum exhibit n-type impurity conductivity. On the basis of these results, a new method is suggested for the fabrication of p-n homojunctions in film structures made of chalcogenide glassy semiconductors doped with bismuth in various ways. DOI: 10.1134/S1063782612100028
ISSN:1063-7826
DOI:10.1134/S1063782612100028