Study of methods for lowering the lasing frequency of a terahertz quantum-cascade laser based on two quantum wells

Two mechanisms for achieving lower terahertz-range frequencies in quantum-cascade structures with two quantum wells based on GaAs/AlGaAs compounds are proposed. The first mechanism is based on the introduction of composite quantum wells consisting of a narrow (∼2 nm) quantum well with a low potentia...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-11, Vol.46 (11), p.1402-1406
Hauptverfasser: Ushakov, D. V., Sadofyev, Yu. G., Samal, N.
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Sprache:eng
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Zusammenfassung:Two mechanisms for achieving lower terahertz-range frequencies in quantum-cascade structures with two quantum wells based on GaAs/AlGaAs compounds are proposed. The first mechanism is based on the introduction of composite quantum wells consisting of a narrow (∼2 nm) quantum well with a low potential barrier, being within the main wide quantum well. The second mechanism is based on barriers with unequal heights, arranged in front of and behind the composite quantum well. Optimized quantum-cascade laser structures emitting in the regions of ∼2.15 and ∼1.35 THz are calculated.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261211022X