Effect of [He.sup.+] ion irradiation on the photosensitivity spectra of InAs/GaAs quantum well and quantum dot heterostructures

Effect of [He.sup.+] ion irradiation on the photosensitivity spectra of InAs/GaAs quantum well and quantum dot heterostructures

The effect of [He.sup.+] ion implantation on the photosensitivity spectra of InGaAs/GaAs quantum well and InAs/GaAs quantum dot heterostructures grown by metalorganic chemical vapor deposition (MOCVD) epitaxy is studied. DOI: 10.1134/S1063782612120068

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Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-12, Vol.46 (12), p.1506
Hauptverfasser: Gorshkov, A.P, Karpovich, I.A, Pavlova, E.D, Volkova, N.S
Format: Artikel
Sprache:eng
Schlagworte:
Chemical vapor deposition
Quantum wells
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Zusammenfassung:The effect of [He.sup.+] ion implantation on the photosensitivity spectra of InGaAs/GaAs quantum well and InAs/GaAs quantum dot heterostructures grown by metalorganic chemical vapor deposition (MOCVD) epitaxy is studied. DOI: 10.1134/S1063782612120068
ISSN:1063-7826
DOI:10.1134/S1063782612120068